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Interaction of atomic oxygen (N2O) with a clean Si(001) surface: O adsorption geometries as derived from the O KVV Auger Lineshape

机译:原子氧(N2O)与干净的Si(001)表面的相互作用:源自O KVV俄歇线形的O吸附几何形状

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摘要

The room temperature adsorption of N2O on the clean Si(001)2 × 1 surface was used as a model system in an Auger electron spectroscopy (AES) study presented in this paper. Earlier experimental and recent theoretical work have provided evidence that this reaction evolves in discernible stages each exhibiting different adsorption geometries for the oxygen atom. In this AES study the intensity ratio of the KL1L1 and KL2,3L2,3 O Auger transitions, ¿, was measured as a function of the fractional oxygen coverage, ¿, and compared with our calculated intensity ratios and binding energy measurements of the O 1s photoelectron from literature. As a result we have found, for the first time, that ¿(¿) can be related to a specific adsorption geometry in the submonolayer range. Moreover, we have found experimental evidence for an intermediate stable O adsorption state on the dimer at low coverage (¿less-than-or-equals, slant 0.2 monolayer), as proposed earlier from theoretical studies.
机译:本文提出的俄歇电子能谱(AES)研究将室温下N2O在干净的Si(001)2×1表面上的吸附作为模型系统。较早的实验和最新的理论工作已提供了证据,表明该反应以明显的阶段发展,每个阶段均表现出对氧原子的不同吸附几何形状。在这项AES研究中,测量了KL1L1和KL2,3L2,3 O Auger跃迁的强度比¿作为分数氧覆盖率¿的函数,并将其与我们计算出的O 1s的强度比和结合能测量值进行了比较来自文献的光电子。结果,我们第一次发现¿(?)可以与亚单分子层范围内的特定吸附几何形状有关。而且,我们发现实验证据表明,低覆盖度(小于或等于,斜率为0.2单层)在二聚体上具有中等稳定的O吸附状态,这是理论研究中较早提出的。

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